A1 Journal article (refereed), original research

Hall effect and band structure of p-CdSb in strong magnetic field


Publication Details

Authors: Laiho R, Lashkul A V, Lisunov K G, Lähderanta Erkki, Safonchik M, Shakhov M A

Publisher: IOP Publishing: Hybrid Open Access

Publication year: 2004

Language: English

Related journal or series: Semiconductor Science and Technology

Volume number: 19

Issue number: 5

Start page: 602

End page: 609

Number of pages: 8

ISSN: 0268-1242

eISSN: 1361-6641

JUFO level of this publication: 0

Digital Object Identifier (DOI): http://dx.doi.org/10.1088/0268-1242/19/5/008

Open Access: Not an Open Access publication


Abstract

The Hall effect in the anisotropic IIV group semiconductor p-CdSb is
investigated at temperatures between T = 3.6 and 200 K and pulsed
magnetic fields up to B = 25 T in unintentionally doped samples oriented
along the crystallographic axes [100] and [010]. The Hall coefficient, R
( B , T ), with B [001] exhibits in low fields a flat region followed
by a descending interval when B is increased. This behaviour is
attributed to the presence of two groups of holes with concentrations p 2
( T ) > p 1 ( T ) and mobilities 2 ( T ) < 1 ( T ), respectively.
The analysis of p 1 ( T ) and p 2 ( T ) demonstrates that below T cr 20
K and down to 67 K the low-mobility carriers p 2 are itinerant holes in
a deeper acceptor band A 2 with an energy E 2 6 meV. The high-mobility
carriers p 1 are at all temperatures T < T cr holes activated
thermally from A 2 to itinerant states of a shallower acceptor band A 1
with an energy E 1 3 meV. At T > T cr p 1 and p 2 are related to the
holes activated to the light- and heavy-hole bands, respectively. The
analysis of 1 ( T ) and 2 ( T ) confirms the existence of the heavy-hole
band or a non-equivalent maximum and two equivalent maxima of the
light-hole valence band.


Last updated on 2019-10-10 at 14:47