A4 Conference proceedings

Mechanism of hopping conductivity of p-CdSb:Ni in magnetic field


Publication Details

Authors: Laiho R, Lashkul Alexander, Lisunov K G, Lähderanta Erkki, Shakhov M A, Zakhvalinskii V

Publisher: Wiley: 12 months

Publication year: 2009

Language: English

Related journal or series: Physica status solidi C

Volume number: 6

Issue number: 5

Start page: 1332

End page: 1335

Number of pages: 4

ISSN: 1862-6351

eISSN: 1610-1642

JUFO level of this publication: 0

Digital Object Identifier (DOI): http://dx.doi.org/10.1002/pssc.200881181

Open Access: Not an Open Access publication


Abstract

Hopping conductivity in single crystals of the group II‐V anisotropic
diluted magnetic semiconductor p‐CdSb:Ni, oriented along the [100] (#
1), [010] (# 2) and [001] (# 3) axes, is investigated in zero and pulsed
magnetic fields B. At B = 0 the Mott variable‐range
hopping (VRH) conductivity is observed in # 2, and the Shklovskii‐Efros
VRH conductivity in # 1 and # 3 at T ≤ 2.5 K. However, in weak fields of B
< 6 T temperature dependence of the resistivity gives evidence for
the Mott VRH conductivity in # 1 below ∼ 4.2 K, whereas in # 2 and # 3
the nearest‐neighbour hopping (NNH) conductivity is observed between
3–4.2 K and between 1.5–4.2 K, respectively. Eventually, in high
magnetic fields of B up to ∼ 15 T and T ≤ 4.2 K only the
NNH conductivity is observed in all investigated samples. The analysis
of the resistivity data yields the set of microscopic parameters, such
as the localization radius, the widths of the Coulomb gap and of the
impurity band, the density of the localized states and the anisotropy
coefficients, as well as the values of the acceptor concentration and
the dielectric permittivity.


Last updated on 2019-11-10 at 13:58