A1 Journal article (refereed), original research

Observation of the anisotropic hopping conductivity of p-CdSb in a magnetic field


Publication Details

Authors: Laiho R, Lashkul A V, Lisunov K G, Lähderanta Erkki, Safonchik M, Shakhov M A

Publisher: IOP Publishing: Hybrid Open Access

Publication year: 2004

Language: English

Related journal or series: Journal of Physics: Condensed Matter

Volume number: 16

Issue number: 3

Start page: 333

End page: 342

Number of pages: 10

ISSN: 0953-8984

eISSN: 1361-648X

JUFO level of this publication: 0

Digital Object Identifier (DOI): http://dx.doi.org/10.1088/0953-8984/16/3/013

Open Access: Not an Open Access publication


Abstract

The resistivity of the anisotropic semiconductor p-CdSb is investigated
in a wide temperature range of T = 1.9300 K in pulsed magnetic fields up
to B = 25 T. Two not intentionally doped single-crystalline samples
oriented along the crystallographic axes [100] (no. 1) and [010] (no. 2)
are used for measurements of the resistivity, , in transversal magnetic
field configuration. Below the resistivity follows the laws for B < B
c and for B > B c , where the coefficients C and S do not depend on T
, and . These are characteristics of nearest-neighbour hopping
conductivity. The coefficients C and S depend on the direction of B ,
and their ratios agree completely with the values calculated with the
components of the hole effective mass. The acceptor concentrations, and
for no. 1 and no. 2, respectively, are relatively close to the critical
value of the metalinsulator transition (MIT), . This leads to
enhancement of the mean localization radii, in no. 1 and in no. 2, with
respect to the value of far from the MIT determined by an asymptote of
the wavefunction at a large distance from the impurity centre.


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