A4 Conference proceedings

Acoustic Emission Caused by the Failure of a Power Transistor


Publication Details
Authors: Kärkkäinen Tommi, Talvitie Joonas, Kuisma Mikko, Silventoinen Pertti, Mengotti Elena
Publication year: 2015
Language: English
Related Journal or Series Information: Applied Power Electronics Conference and Exposition
JUFO-Level of this publication: 1
Open Access: Not an Open Access publication

Abstract
The authors show for the first time that acoustic events are related to the failure of transistors. An experimental setup is presented, that was used to make a sample of 26 insulated gate bipolar transistors (IGBT) to fail. The acoustic events in the transistors were monitored. It was discovered that two distinct types of acoustic events are related to the failure. This study complements recent work where it was shown that the switching operation of power transistors causes acoustic emissions to take place.

Last updated on 2017-22-03 at 14:12