A4 Conference proceedings

Macro timescale RDS, on phanomena in GaN HEMTs


Publication Details
Authors: Järvisalo Heikki, Korhonen Juhamatti, Aalto Henri M., Silventoinen Pertti
Publication year: 2018
Language: English
Related Journal or Series Information: European Conference On Power Electronics And Applications
Title of parent publication: 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
Journal acronym: EPE-ECCE Europe
ISBN: 978-1-5386-4145-3
eISBN: 978-9-0758-1528-3
ISSN: 2325-0313
JUFO-Level of this publication: 1
Open Access: Not an Open Access publication

Abstract

Gallium nitride (GaN) switches have superior switching performance when compared to the traditional Si technology. However, the GaN switches possess a phenomenon called current collapse, in which the channel resistance temporarily increases. In this paper, macro timescale behavior of the channel resistance under different switching stresses is studied.


Last updated on 2019-11-10 at 10:55