A4 Conference proceedings
Macro timescale RDS, on phanomena in GaN HEMTs
Publication Details Authors: Järvisalo Heikki, Korhonen Juhamatti, Aalto Henri M., Silventoinen Pertti
Publication year: 2018
Language: English
Related Journal or Series Information: European Conference On Power Electronics And Applications Title of parent publication: 2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
Journal acronym: EPE-ECCE Europe
ISBN: 978-1-5386-4145-3
eISBN: 978-9-0758-1528-3
ISSN: 2325-0313
JUFO-Level of this publication: 1
Open Access: Not an Open Access publication
|
Abstract
Gallium nitride (GaN) switches have superior switching performance when compared to the traditional Si technology. However, the GaN switches possess a phenomenon called current collapse, in which the channel resistance temporarily increases. In this paper, macro timescale behavior of the channel resistance under different switching stresses is studied.