A1 Journal article (refereed), original research

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy


Open Access publication

Publication Details
Authors: Pozina Galia, Gubaydullin Azat R., Mitrofanov Maxim I., Kaliteevski Mikhail A., Levitskii Iaroslav V., Voznyuk Gleb V., Tatarinov Evgeniy E., Evtikhiev Vadim P., Rodin Sergey N., Kaliteevskiy Vasily N., Chechurin Leonid S.
Publisher: Nature Publishing Group: Open Access Journals - Option C / Nature Publishing Group
Publication year: 2018
Language: English
Related Journal or Series Information: Scientific Reports
Journal name in source: Scientific reports
Volume number: 8
ISSN: 2045-2322
JUFO-Level of this publication: 2
Open Access: Open Access publication

Abstract
We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.

Last updated on 2019-13-03 at 12:00