Tutkijatohtori Heikki Järvisalo

E-mail: Heikki.Jarvisalo@lut.fi
Mobile phone: +358 40 574 1352
CV:
Uploaded on: 01/04/2020

Current Organisation
Laboratory of Applied Electronics (Superior organisation: Laboratory of Electrical Engineering)

Research Interest
Wide band gap semiconductor devices, especially galliumnitride (GaN)
High-speed electrical drives
Electronics

Publications
Channel resistance behavior of GaN HEMTs: an experimental study (2019)
A4 Conference proceedings
Järvisalo Heikki, Korhonen Juhamatti, Nykyri Mikko, et al.
7th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019)
Hands-on work in a web-based Basic Electronics course (2019)
A4 Conference proceedings
Naukkarinen Johanna, Kuisma Mikko, Järvisalo Heikki
SEFI 47th Annual Conference 2019 Proceedings
Discussion of ”A Comparative Study Between PI and Type-II Compensators for H-Bridge PFC Converter” (2018)
A1 Journal article (refereed), original research
Honkanen Jari, Järvisalo Heikki, Kärkkäinen Tommi, et al.
Macro timescale RDS, on phanomena in GaN HEMTs (2018)
A4 Conference proceedings
Järvisalo Heikki, Korhonen Juhamatti, Aalto Henri M., et al.
European Conference On Power Electronics And Applications
2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
Considerations for a high-speed PMSM drive featuring a GaN-ANPC inverter (2017)
A4 Conference proceedings
Järvisalo Heikki, Korhonen Juhamatti, Honkanen Jari, et al.
European Conference On Power Electronics And Applications
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)




Last updated on 2020-01-04 at 05:03